Temperature Dependence of Transient Electron Radiation Upset in TTL NAND Gates

Degradation of Rise Time in NAND Gates

CMOS NAND gate circuit performance degradation caused by a single pMOSFET wearout induced by constant voltage stress in 2.0 nm gate dielectrics is examined using a switch matrix technique. The NAND gate rise time is found to increase by approximately 64%, which may lead to timing errors in high frequency digital circuits. The degraded pMOSFET reveals that a decrease in drive current by 41% and ...

Universal Gates: NAND and NOR

CMOS Architectures for NOR & NAND Logic Gates Using Single Electron Transistors

Single electron transistor (SET) is one of the nano devices suitable for developing nano-scale logic circuits. In this paper, CMOS architectures for NOR and NAND gates have been proposed using SET’s and their operational characteristics have been verified by using the simulation model SET-SPICE. First, a two-input NOR gate was designed and verified and then the design was extended to implement ...

Possible weak temperature dependence of electron dephasing

The first-principle theory of electron dephasing by disorder-induced two state fluctuators is developed. There exist two mechanisms of dephasing. First, dephasing occurs due to direct transitions between the defect levels caused by inelastic electron-defect scattering. The second mechanism is due to violation of the time reversal symmetry caused by time-dependent fluctuations of the scattering ...

Bounds on finding triangles (in tiny graphs) with NAND gates

Finding cliques is one problem which has been studied for lower bounds. It’s hard to approximate, and Razborov showed that a monotone (ANDand ORgate) circuit which solves it has exponentially many gates. Therefore, if you’re going to look for lower bounds, it seems like a worthwhile problem to look at. How many (unbounded fan-in) NAND gates are needed to find triangles in an undirected graph? H...